La Habana, Cuba
Monday, 8 february 2010
10:18pm
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Converging technologies: integration and independence
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Documento sin título
Integrated ferroelectric thin film devices
Conferencias
11-02-2009 | 15:00-15:45
Conventions Palace - Hall 7

Event:
2nd International Symposium on Computing and Electronics: design, applications, advanced techniques and current challenges

Keynote Speaker:
PhD. Ulrich Bottger - Germany

Abstract:

Integrated ferroelectric thin films hold an outstanding interest on integrated ferroelectric thin films because of their manifold use in memory devices, automotive applications, RF and microwave components, sensors and actuators. This class of materials promises cost effective, future devices with a new functionality, a higher performance, and a lower energy consumption. The paper will give some device examples of integrated ferroelectric thin films in order to point out the current status and challenges.

Ferroelectric capacitors are candidates for non-volatile ferroelectric Random Access Memories (FeRAMs). Besides integration-related difficulties the reliability of thin film capacitors is the most crucial challenge for their use in memory devices. It will be shown that the underlying mechanisms are related to a non-ferroelectric interface layer between the electrode the interior of the film.

Piezoelectric driven micro-electro-mechanical systems (MEMS) are fast becoming an important part of research, e. g. as RF piezoelectric MEMS for signal processing and wireless transceivers, nanoscale piezoelectric resonators for biological detection and medical imaging, resonators for multi-functional wireless sensor nodes or deflection components for video imaging. The integration process of the piezoelectric thin films is the most important issue, which is demonstrated by the realization of a multi-functional PZT cantilever.

The tunability of ferroelectrics is used for the realization of thin film varactors in voltage tunable RF and microwave components for wireless communication. From the material point of view a high tunability, low dielectric losses, and a sufficient temperature stability are required for such devices. It will be shown that barium strontium titanate (BST) is the most suitable composition for microwave applications. Examples for phase shifters and tunable filters with integrated thin film varactors will be presented.



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